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AssigneeOSRAM Opto Semiconductors GmbH
InventorsChristoph Eichler, Andreas Breidenassel, Alfred Lell
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A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).
Semiconductor laser light source comprising an edge-emitting semiconductor body which contains a semiconductor layer stack having an n-type layer, an active layer and a p-type layer which is formed for generating electromagnetic radiation which comprises a coherent portion, wherein
Semiconductor laser light source comprising an edge-emitting semiconductor body which contains a semiconductor layer stack having an n-type layer, an active layer and a p-type layer which is formed for generating electromagnetic radiation which comprises a coherent portion, and comprising a photodiode which is integrated monolithically into the semiconductor body, wherein
Dependencies are inferred from the claim text.