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US 2015/0085594 A1Published application
Method and apparatus for refreshing a memory cell
AssigneeQUALCOMM Incorporated
InventorsXiangyu Dong, Jung Pill Kim, Deepti Vijayalakshmi Sriramagiri, Jungwon Suh
Life of this patent
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Abstract
Memory devices may send information related to refresh rates to a memory controller. The memory controller may instruct the memory devices to refresh based on the received information.
Claims30
An apparatus comprising:
- a memory device comprising dedicated data storage to store retention time profile information of the memory device, wherein the retention time profile information in the dedicated data storage is accessible to a memory controller via a data bus.
A method comprising:
- storing retention time profile information at dedicated data storage of a memory device;
- receiving refresh commands from a memory controller, wherein the refresh commands are received at a rate based at least partially on the retention time profile information;
- and
- refreshing memory cells within the memory device in response to receiving a refresh command.
1 more element
A method comprising:
- reading, at a memory controller, retention time profile information from dedicated data storage of a memory device;
- generating refresh commands at a rate based at least partially on the retention time profile information;
- and
- sending the refresh commands to the memory device via a command bus, wherein the refresh commands instruct the memory device to refresh memory cells.
1 more element
A method comprising:
- detecting, at a memory controller, a first rate of first pulses from a first memory device over a first sideband channel, wherein the first rate is associated with a refresh rate of first memory cells in the first memory device;
- detecting a second rate of second pulses from a second memory device over a second sideband channel, wherein the second rate is associated with a refresh rate of second memory cells in the second memory device;
- and
- sending refresh commands to the first memory device and to the second memory device at the first rate or at the second rate, wherein the refresh commands instruct the first memory device to refresh the first memory cells, and wherein the refresh commands instruct the second memory device to refresh the second memory cells.
1 more element
Dependencies are inferred from the claim text.