Estimation of level-thresholds for memory cells
AssigneeGlobalfoundries Inc.
InventorsThomans Mittelholzer, Nikolaos Papandreou, Haris Pozidis
Life of this patent
Estimating the term…
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AssigneeGlobalfoundries Inc.
InventorsThomans Mittelholzer, Nikolaos Papandreou, Haris Pozidis
Estimating the term…
Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.
A level-threshold determination method for q-level memory cells, the method comprising:
A method for detecting codewords each having N qary symbols which are stored in respective q-level memory cells, the method comprising:
An apparatus for level-threshold determination on readout of q-level memory cells, the apparatus comprising:
An apparatus as claimed in claim 17 wherein said memory cells are phase-change memory cells.
Dependencies are inferred from the claim text.