Non-volatile memory programming
AssigneeMicron Technology, Inc.
InventorsViolante Moschiano, Giovanni Santin, Michele Incarnati
Life of this patent
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Abstract
Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying a signal to a line associated with a memory cell, the signal being generated based on digital information. The method can also include, while the signal is applied to the line, determining whether a state of the memory cell is near a target state when the digital information has a first value, and determining whether the state of the memory cell has reached the target state when the digital information has a second value. Other embodiments including additional memory devices and methods are described.
Claims20
An apparatus comprising:
- a memory cell;
- and
- a module to:
- apply a signal to an access line associated with the memory cell, the signal being generated based on digital information;
- determine whether the memory cell is near a target state when the digital information has a first value;
- and
- determine whether the memory cell has reached the target state when the digital information has a second value.
A method comprising:
- generating first information;
- generating second information;
- determining whether a memory cell is near a target state when a value of the first information corresponds to the target threshold voltage value;
- and
- determining whether the memory cell has reached the target state when a value of the second information corresponds to the target threshold voltage value.
A method comprising:
- applying a signal to a line associated with a first memory cell and a second memory cell, the signal being generated based on input information;
- determining whether a threshold voltage value of a first memory cell reaches a value near a first target threshold voltage value when the input information has a first value and while the signal is applied to the line;
- determining whether the threshold voltage value of the first memory cell reaches the first target threshold voltage value when the input information has a second value and while the signal is applied to the line;
- determining whether a threshold voltage value of the second memory cell reaches a value near a second target threshold voltage value when the input information has a third value and while the signal is applied to the line;
- and
- determining whether the threshold voltage value of the second memory cell reaches the second target threshold voltage value when the input information has a fourth value and while the signal is applied to the line.
Dependencies are inferred from the claim text.