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US 2015/0085573 A1Published application
Updating read voltages
AssigneeSanDisk Technologies LLC
InventorsERAN SHARON, ARIEL NAVON, ALEXANDER BAZARSKY
Life of this patent
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Abstract
A method performed at a data storage device includes adjusting a first read voltage and a second read voltage to form sets of read voltages. First representations of data are read from a logical page in the non-volatile memory according to the sets of read voltages. The first representations of the data correspond to multiple values of the first read voltage and the second read voltage. The first representations of the data are stored in a memory and second representations of the data are generated based on the first representations. A value of the first read voltage is selected based on syndrome weights corresponding to the second representations.
Claims26
A method of updating a set of read voltages, the method comprising:
- in a data storage device including a controller and a non-volatile memory, performing:
- iteratively adjusting a first read voltage and a second read voltage to form sets of read voltages, wherein each of the sets of read voltages includes a first value of the first read voltage and a second value of the second read voltage, wherein an adjustment of the second read voltage is a function of an adjustment of the first read voltage;
- reading first representations of data from a logical page in the non-volatile memory according to the sets of read voltages, the first representations of the data corresponding to multiple values of the first read voltage and the second read voltage;
- storing the first representations of the data in a memory;
- generating second representations of the data based on the first representations, the second representations corresponding to adjusting the first read voltage and the second read voltage;
- and
- selecting a value of the first read voltage based on a comparison of syndrome weights corresponding to the second representations.
4 more elements
A method of updating a set of read voltages, the method comprising:
- in a data storage device including a controller and a non-volatile memory, performing:
- iteratively adjusting a first read voltage and a second read voltage to form sets of read voltages, wherein each of the sets of read voltages includes a first value of the first read voltage and a second value of the second read voltage;
- reading first representations of data from a logical page in the non-volatile memory according to the sets of read voltages, the first representations of the data corresponding to multiple values of the first read voltage and the second read voltage;
- storing the first representations of the data in a memory;
- converting the first representations of the data from a first mapping of threshold voltage ranges to bit sequences to a second mapping that includes fewer bits per bit sequence than the first mapping to generate a re-mapped representation of the data;
- generating second representations of the data based on the re-mapped representation of the data;
- and
- selecting a value of the first read voltage based on ECC related information corresponding to the second representations.
5 more elements
A data storage device comprising:
- a non-volatile memory;
- and
- a controller coupled to the non-volatile memory, wherein the controller is configured to adjust a first read voltage and a second read voltage to form sets of read voltages, wherein each of the sets of read voltages includes a first value of the first read voltage and a second value of the second read voltage, wherein the controller is configured to store first representations of the data into a memory, the first representations read from a logical page in the non-volatile memory according to the sets of read voltages, the first representations of the data corresponding to multiple values of the first read voltage and the second read voltage,
- wherein the controller is further configured to generate second representations of the data based on the first representations, the second representations corresponding to adjusting the first read voltage and the second read voltage, and wherein the controller is configured to select a value of the first read voltage based on a comparison of syndrome weights corresponding to the second representations.
1 more element
A data storage device comprising:
- a non-volatile memory;
- and
- a controller coupled to the non-volatile memory, wherein the controller is configured to update a first read voltage by generating multiple sets of read voltages to read first representations of data from a logical page in the non-volatile memory, wherein the controller is configured to convert the first representations of the data from a first mapping of threshold voltage ranges to bit sequences to a second mapping that includes fewer bits per bit sequence than the first mapping to generate a re-mapped representation of the data, wherein the controller is configured to store the re-mapped representation of the data into a controller memory, and wherein the controller is configured to update the first read voltage based on error correction coding (ECC) related information, the ECC related information responsive to second representations of the data that are based on the re-mapped representation of the data,
- wherein each of the sets of read voltages includes a first value of the first read voltage that is distinct from the first values of the first read voltage in the other sets of read voltages, and
- wherein each of the sets of read voltages includes a second value of a second read voltage that is distinct from the second values of the second read voltages in the other sets of read voltages.
2 more elements
Dependencies are inferred from the claim text.