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US 2015/0085570 A1Published application
Phase change memory mask
AssigneeIntel Corporation
InventorDaniel J. Chu
Life of this patent
Estimating the term…
Abstract
Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.
Claims20
A phase change memory, comprising:
- an array of phase change memory cells;
- and
- a mask receiver for individual cells in the array to receive a mask, identify existing data, identify input data and determine whether to inhibit a reset pulse.
A method of writing data to a phase change memory array, comprising:
- identifying mask logic for masking cells in the phase change memory array;
- routing the mask logic to the cells;
- routing input data to the cells;
- and
- selectively preventing set or reset pulses for the cells based on the mask logic.
2 more elements
Dependencies are inferred from the claim text.