Cross-Point Memory Cells, Non-Volatile Memory Arrays, Methods of Reading a Memory Cell, Methods of Programming a Memory Cell, Methods of Writing to and Reading from a Memory Cell, and Computer Systems

A memory cell comprising:

• a first electrode;
• a second electrode;
• semiconductive material intermediate the first and second electrodes and configured to have different capacitance states at different moments in time corresponding to different ones of a plurality of programmed states of the memory cell;
• and
• wherein the semiconductive material has different dielectric thicknesses corresponding to the different capacitance states at the different moments in time.

A memory cell comprising:

• a first electrically conductive region;
• a second electrically conductive region;
• an electrically insulative region between the first and second electrically conductive regions while the memory cell is programmed in different ones of a plurality of programmed states;
• and
• wherein one of the first and second electrically conductive regions has an increased thickness in a direction towards an other of the first and second electrically conductive regions while the memory cell is programmed in one of the programmed states compared with an other of the programmed states.

A memory system comprising:

• a memory cell configured to be programmed in a plurality of different programmed states at different moments in time;
• driver circuitry coupled with the memory cell and configured to apply a driver signal to the memory cell;
• and
• detection circuitry coupled with the memory cell and configured to sense a current flowing into the memory cell at a first moment in time during the application of the driver signal to the memory cell and to sense a current from the memory cell at a second moment in time during the application of the driver signal to the memory cell.