Resistance change memory
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi SONEHARA, Takayuki OKAMURA, Takashi SHIGEOKA, Masaki KONDO
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Abstract
A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectifying element connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a voltage to change a resistance of the memory element between first and second values reversibly. The rectifying element is a diode including an anode layer, a cathode layer and an insulating layer therebetween.
Claims20
(canceled)
A resistance change memory comprising:
- a first conductive line extending in a first direction;
- a second conductive line extending in a second direction which is crossed to the first direction;
- a cell unit including a memory element and a rectifying element connected in series between the first and second conductive lines;
- and
- a control circuit which is connected to both of the first and second conductive lines,
- wherein the control circuit is configured to control a voltage to change a resistance of the memory element between first and second values reversibly,
- wherein the rectifying element is a diode including a first metal layer, a first insulating layer, a second insulating layer, a second metal layer,
- wherein the first insulating layer, and the second insulating layer are sandwiched between the first metal layer and the second metal layer, and
- wherein the first insulating layer is sandwiched between the first metal layer and the second insulating layer.
Dependencies are inferred from the claim text.