Semiconductor device and write method
AssigneeMicron Technology, Inc.
InventorsAkiko Maeda, Shuichi Tsukada, Yusuke Jono
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Abstract
A semiconductor device includes a memory cell array including a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied, the first memory cell to which the forming voltage is applied, and the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other.
Claims20
A semiconductor device, comprising:
- a memory cell array comprising a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied;
- the first memory cell to which the forming voltage is applied, and
- the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other.
A method comprising:
- performing a write operation, on a plurality of memory cells each comprising a variable resistance element to write first information including first and second logic values that are different from each other, and the write operation comprising:
- storing the first logic value in a first one of the memory cells by applying a forming voltage to the first one of the memory cells;
- and
- storing the second logic value in a second one of the second memory cells by not applying the forming voltage to the second one of the second memory cells.
Dependencies are inferred from the claim text.