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US 2015/0085560 A1Published application
Reram memory control method and device
AssigneeSTMicroelectronics S.r.l.
InventorsPhilippe Candelier, Thérèse Andrée Diokh, Joel Damiens, Elise Le Roux
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Abstract
A method of controlling an array of ReRAM cells including programmable-resistance storage elements, including: during a standby period, applying a non-zero standby voltage between electrodes of the storage elements of each cell of the array.
Claims26
A method, comprising:
- programming a programmable-resistance storage element of a ReRam cell of an array of ReRam cells during a programming period;
- and
- applying a non-zero standby voltage between electrodes of storage elements of each cell of the array of ReRam cells during a stand-by period.
A device, comprising:
- a plurality of ReRAM cells each including a programmable-resistance storage element;
- and
- control circuitry coupled to the plurality of ReRAM cells, which, in operation,
- programs a programmable-resistance storage element of at least one ReRam cell during a programming period;
- and
- applies a non-zero standby voltage between electrodes of each programmable-resistance storage element of the plurality of ReRam cells during a stand-by period.
3 more elements
A device, comprising:
- a plurality of control signal outputs;
- and
- control circuitry coupled to the plurality of control signal outputs, which, in operation, generates control signals to,
- selectively program programmable-resistance storage elements of a plurality of ReRam cells during programming periods;
- and
- apply a non-zero standby voltage between electrodes of storage elements of each ReRAM cell of the plurality of ReRam cells during stand-by periods.
3 more elements
A non-transitory computer-readable medium whose contents cause control circuitry to control a ReRAM array by generating control signals to,
- program selected programmable-resistance storage elements of ReRam cells of the array during programming periods;
- and
- apply a non-zero standby voltage between electrodes of storage elements of each ReRAM cell of the array during stand-by periods.
Dependencies are inferred from the claim text.