Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJong-Chul LEE, Ja-Chun KU, Sung-Kyu MIN, Byung-Jick CHO, Seung-Beom BAEK, Hyo-June KIM, Won-Ki JU, Hyun-Kyu KIM
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AssigneeSK hynix Inc.
InventorsJong-Chul LEE, Ja-Chun KU, Sung-Kyu MIN, Byung-Jick CHO, Seung-Beom BAEK, Hyo-June KIM, Won-Ki JU, Hyun-Kyu KIM
Estimating the term…
According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.
An electronic device comprising a semiconductor memory,
Dependencies are inferred from the claim text.