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AssigneeTaiwan Semiconductor Co., Ltd.
InventorsCHIH-YANG CHANG, WEN-TING CHU, YU-WEI TING, CHUN-YANG TSAI, KUO-CHING HUANG
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A device and method for forming resistive random access memory cell are provided. The method includes: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell. An exemplary device includes: a first RRAM cell, a second RRAM cell, a first voltage source and a charge pump circuit. The first RRAM cell is connected to a first word line. The second RRAM cell is connected to a second word line. The first voltage source provides a first voltage to the first word line to form the first RRAM cell. The charge pump circuit provides a negative voltage to the second word line.
A device, comprising:
The device of claim 5, wherein the third voltage source provides the third voltage to the first bit line connected to the third RRAM cell.
The device of claim 8, wherein the third voltage source provides the third voltage to a second bit line connected to the fourth RRAM cell, the fifth RRAM cell and the sixth RRAM cell.
A method for forming a resistive random access memory (RRAM) cell, comprising:
Dependencies are inferred from the claim text.