Static nand cell for ternary content addressable memory (tcam)

A static, ternary content addressable memory (TCAM), comprising:

• a first means for generating a comparison output based on a comparison of a search bit to a key bit, wherein a first pull-down transistor conducts and a first pull-up transistor does not conduct in response to the comparison output indicating a match between the search bit and the key bit, and wherein the first pull-down transistor does not conduct and the first pull-up transistor conducts in response to the comparison output indicating a mismatch between the search bit and the key bit;
• a second means for generating a mask output, wherein a second pull-down transistor conducts and a second pull-up transistor does not conduct in response to the mask output being asserted, and wherein the second pull-down transistor does not conduct and the second pull-up transistor conducts in response to the mask output being de-asserted, the first pull-down transistor and the second pull-down transistor being connected in parallel between a match line output and a first supply voltage terminal, and the first pull-up transistor and the second pull-up transistor being connected in series between a second supply voltage terminal and the match line output;