Eos protection circuit with fet-based trigger diodes

A method for operating an electrical overstress (EOS) protection circuit, comprising:

• generating a trigger signal in response to a supply voltage exceeding a specified maximum supply voltage for a protected circuit and exceeding a breakdown voltage of at least one trigger field-effect transistors (FETs) within a trigger device;
• the protected circuit including FETs of a first type having a first breakdown voltage (VBD) resulting from a first set of design and manufacturing process parameters and having VBD process and temperature tracking characteristics resulting from a second set of design and manufacturing process parameters;
• the trigger device including at least one trigger FET of a second type having a second VBD that is less than the first VBD resulting from modifications to the first set of design and manufacturing process parameters, and having VBD process and temperature tracking characteristics resulting from the second set of design and manufacturing process parameters;
• connecting a supply voltage node to a ground node by activating a clamping device in response to a first state of the trigger signal;
• and
• disconnecting the supply voltage node from the ground node by deactivating the clamping device in response to a second state of the trigger signal.