Stacked protection devices and related fabrication methods
AssigneeFreescale Semiconductor, Inc.
InventorsWEIZE CHEN, PATRICE M. PARRIS
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Abstract
Protection device structures and related fabrication methods and devices are provided. An exemplary device includes a first interface, a second interface, a first protection circuitry arrangement coupled to the first interface, and a second protection circuitry arrangement coupled between the first protection circuitry arrangement and the second interface. The second protection circuitry arrangement includes a first transistor and a diode coupled to the first transistor, wherein the first transistor and the diode are configured electrically in series between the first protection circuitry arrangement and the second interface.
Claims20
A device comprising:
- a first interface;
- a second interface;
- a first protection circuitry arrangement coupled to the first interface;
- a second protection circuitry arrangement coupled between the first protection circuitry arrangement and the second interface, the second protection circuitry arrangement comprising:
- a first transistor;
- and
- a diode coupled to the first transistor, wherein the first transistor and the diode are configured electrically in series between the first protection circuitry arrangement and the second interface.
A semiconductor device comprising:
- a base region of semiconductor material having a first conductivity type;
- an emitter region of semiconductor material within the base region, the emitter region having a second conductivity type opposite the first conductivity type;
- a collector region of semiconductor material having the second conductivity type, wherein at least a portion of the base region resides between the emitter region and the collector region;
- a cathode region of semiconductor material adjacent to the base region, the cathode region having the second conductivity type, wherein the cathode region is electrically connected to the collector region;
- and
- an anode region of semiconductor material abutting the cathode region, the anode region having the first conductivity type.
A method of fabricating an electronic device, the method comprising:
- forming a first protection circuitry arrangement on a substrate;
- forming a second protection circuitry arrangement on the substrate, the second protection circuitry arrangement comprising a first transistor element and a diode element formed on the substrate, wherein the diode element and the first transistor element are configured electrically in series;
- providing a first electrical connection between the first protection circuitry arrangement and a first device terminal;
- providing a second electrical connection between the second protection circuitry arrangement and a second device terminal;
- and
- providing a third electrical connection between the first protection circuitry arrangement and the second protection circuitry arrangement, wherein the third electrical connection results in the first protection circuitry arrangement and the second protection circuitry arrangement being configured electrically in series between the first device terminal and the second device terminal
Dependencies are inferred from the claim text.