Projection exposure apparatus and method for controlling a projection exposure apparatus

An apparatus, comprising:

• an illumination system configured to illuminate an illumination field on an object;
• a displacement device configured to move the object within a scanning region, the displacement device having a maximum scanning speed;
• and
• a control device configured to convert a measurement signal relating to the illuminated illumination field into a control signal to control an operational parameter of the apparatus within a period of time during which the displacement device is moved over at most 10% of the length of the scanning region at the maximum scanning speed,
• wherein the apparatus is a microlithography projection exposure apparatus.

An apparatus, comprising:

• an illumination system configured to radiate an illumination field on a first object;
• a displacement device configured to move the first object with respect to a frame along a scanning axis so that the first object is scanned by the illumination field;
• a projection lens configured to generate a dose distribution on a second object from the illumination of the illumination field after interaction with the first object;
• a measuring device configured to measure positional changes of the illumination field in the direction of the scanning axis with respect to the frame;
• and
• a control device configured to correct an influence of a measured positional change of the illumination field on the dose distribution on the second object by modifying at least one operational parameter of the projection exposure apparatus,
• wherein the apparatus is a microlithography projection exposure apparatus.

A method, comprising:

• a) moving a reticle along a scanning axis so that:
• i) the reticle is scanned by an illumination field radiated thereon;
• and ii) the radiation of the illumination field is guided onto a wafer after interacting with the reticle to generate a dose distribution on the wafer;
• b) during a), measuring positional changes of the illumination field in the direction of a scanning axis;
• and
• c) during a), modifying at least one operational parameter of the projection exposure apparatus to correct an influence of a measured positional change of the illumination field on the dose distribution on the wafer.