Extreme Ultraviolet Lithography Process And Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Cheng LU, Shinn-Sheng YU, Jeng-Horng CHEN, Anthony YEN
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Abstract
A system of an extreme ultraviolet lithography (EUVL) is disclosed. an extreme ultraviolet lithography (EUVL) system includes an extreme ultraviolet (EUV) reflection-type mask having a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over a patterned absorption layer. The system also includes a radiation to expose the EUV mask and a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.
Claims20
An extreme ultraviolet lithography (EUVL) system comprising:
- an extreme ultraviolet (EUV) reflection-type mask, including:
- a substrate;
- a multilayer mirror disposed over the substrate;
- a capping layer disposed over the multilayer mirror;
- a patterned absorption layer disposed over the capping layer, wherein the patterned absorption layer defines a pattern density;
- a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over the patterned absorption layer, wherein a material and thickness of the patterned absorber layer and the patterned FSbPhS layer are such that a substantial portion of a first radiation wave of a pre-determined wavelength that reflects from the patterned FSbPhS layer in an out-of-phase relationship with a second radiation wave of the pre-determined wave length that reflects from the multilayer mirror;
- a radiation source to generate a radiation to expose the EUV mask;
- and
- a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.
An extreme ultraviolet (EUV) mask, comprising:
- a low thermal expansion material (LTEM) substrate;
- a reflective multilayer (ML) over the LTEM substrate;
- a capping layer over the ML;
- and
- a patterned flare-suppressing absorption stack (FSAS) over the capping layer, wherein the patterned FSAS includes a patterned absorption layer deposited over the capping layer and a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over the patterned absorption layer.
An extreme ultraviolet lithography (EUVL) method comprising:
- providing a radiation having EUV and DUV lights;
- directing the radiation to a mask;
- reflecting a portion of the EUV and DUV light from a reflective region of the mask;
- absorbing a portion of the EUV light in an absorptive region of the mask;
- destructively interfering with the portion of DUV light reflected from the reflective region by reflecting a portion of the DUV light 180 degrees out of phase from a flare-suppressing-by-phase-shifting (FSbPhS) layer in the absorptive region of the mask;
- and
- directing reflected light to a target.
Dependencies are inferred from the claim text.