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US 2015/0085235 A1Published application
Liquid crystal display device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Yoshiharu HIRAKATA
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Abstract
In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of a source wiring and a pixel electrode are carried out by the same photomask.
Claims16
(canceled)
A liquid crystal display device comprising:
- a gate wiring over an insulating surface;
- a first insulating film comprising silicon nitride over the gate wiring;
- a first amorphous semiconductor film over the first insulating film;
- a pair of second amorphous semiconductor films over the first amorphous semiconductor film;
- a first wiring over and electrically connected to one of the pair of second amorphous semiconductor films;
- a second wiring over and electrically connected to the other of the pair of second amorphous semiconductor films;
- a second insulating film comprising silicon nitride over the first wiring and the second wiring;
- a transparent electrode in direct contact with a side surface of the second wiring;
- a common electrode overlapping the transparent electrode;
- an alignment film over the transparent electrode and the common electrode;
- and
- a liquid crystal over the alignment film,
- wherein the first wiring overlaps the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films,
- wherein the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films extend along the first wiring,
- wherein a part of the first amorphous semiconductor film and a part of the pair of second amorphous semiconductor films overlap the gate wiring,
- wherein the second insulating film is in contact with the part of the first amorphous semiconductor film and the part of the pair of second amorphous semiconductor films, and
- wherein the first wiring overlaps the gate wiring and the common electrode.
14 more elements
A liquid crystal display device comprising:
- a gate wiring over an insulating surface;
- a first insulating film comprising silicon nitride over the gate wiring;
- a first amorphous semiconductor film over the first insulating film;
- a pair of second amorphous semiconductor films over the first amorphous semiconductor film;
- a first wiring over and electrically connected to one of the pair of second amorphous semiconductor films;
- a second wiring over and electrically connected to the other of the pair of second amorphous semiconductor films;
- a second insulating film comprising silicon nitride over the first wiring and the second wiring;
- a transparent electrode in direct contact with a side surface of the second wiring;
- a common electrode overlapping the transparent electrode;
- an alignment film over the transparent electrode and the common electrode;
- a liquid crystal over the alignment film;
- and
- a terminal portion comprising a conductive layer formed of a same layer as the transparent electrode,
- wherein the first wiring overlaps the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films,
- wherein the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films extend along the first wiring,
- wherein a part of the first amorphous semiconductor film and a part of the pair of second amorphous semiconductor films overlap the gate wiring,
- wherein the second insulating film is in contact with the part of the first amorphous semiconductor film and the part of the pair of second amorphous semiconductor films, and
- wherein the first wiring overlaps the gate wiring and the common electrode.
15 more elements
A liquid crystal display device comprising:
- a gate wiring over an insulating surface;
- a first insulating film over the gate wiring;
- a first amorphous semiconductor film over the first insulating film;
- a pair of second amorphous semiconductor films over the first amorphous semiconductor film;
- a first wiring over and electrically connected to one of the pair of second amorphous semiconductor films;
- a second wiring over and electrically connected to the other of the pair of second amorphous semiconductor films;
- a second insulating film over the first wiring and the second wiring;
- a transparent electrode in direct contact with a side surface of the second wiring;
- a common electrode overlapping the transparent electrode;
- an alignment film over the transparent electrode and the common electrode;
- a liquid crystal over the alignment film;
- and
- a terminal portion comprising a conductive layer formed of a same layer as the transparent electrode,
- wherein the first wiring overlaps the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films,
- wherein the first amorphous semiconductor film and the one of the pair of second amorphous semiconductor films extend along the first wiring,
- wherein a part of the first amorphous semiconductor film and a part of the pair of second amorphous semiconductor films overlap the gate wiring,
- wherein the second insulating film is in contact with the part of the first amorphous semiconductor film and the part of the pair of second amorphous semiconductor films, and
- wherein the first wiring overlaps the gate wiring and the common electrode.
15 more elements
Dependencies are inferred from the claim text.