Solid-state imaging device, method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorsKazufumi Watanabe, Yasushi Maruyama
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Abstract
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
Claims10
A solid-state imaging device comprising:
- a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged;
- an on-chip color filter;
- an on-chip microlens;
- a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film;
- and
- a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
A solid-state imaging device comprising:
- a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged;
- an on-chip color filter;
- an on-chip microlens having an antireflection film on a lens plane of a surface thereof;
- and
- a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film
- wherein the pixel transistor and the multilayer interconnection layer are configured as a back-illuminated type formed in a side opposite to a light receiving surface in which the photoelectric conversion section is arranged.
A method of manufacturing a solid-state imaging device comprising the steps of:
- forming an antireflection film on a backside used as a light receiving surface of a semiconductor substrate in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is formed;
- forming a light-shielding film selectively in a portion corresponding to a pixel boundary on the antireflection film;
- and
- forming a planarization film on the antireflection film that includes the light-shielding film;
- forming an on-chip color filter and an on-chip microlens sequentially on the planarization film.
An electronic apparatus comprising:
- a solid-state imaging device;
- an optical system that leads incident light to the solid-state imaging device;
- a signal processing circuit that processes an output signal of the solid-state imaging device,
- wherein the solid-state imaging device includes:
- a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged;
- an on-chip color filter;
- an on-chip microlens;
- a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film;
- and
- a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
Dependencies are inferred from the claim text.