Reconfigurable multi-stack inductor

A method of forming a reconfigurable multi-stack inductor structure within a semiconductor structure having a first and a second metal layer, the method comprising:

• forming, within the first metal layer, a first inductor structure;
• forming, within the first metal layer, a first ground shielding structure that is electrically isolated from and circumferentially bounds the first inductor structure;
• forming, within the second metal layer, a second inductor structure;
• electrically coupling the first inductor structure and second inductor structure;
• forming, within the second metal layer, a second ground shielding structure that is electrically isolated from and circumferentially bounds the second inductor structure;
• electrically grounding the first and the second ground shielding structure to generate a first inductance value;
• and
• electrically floating the first and the second ground shielding structure to generate a second inductance value.

A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:

• a first inductor structure located within a first metal layer of the semiconductor structure;
• a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure;
• a second inductor structure located within a second metal layer of the semiconductor structure, the second inductor structure electrically coupled to the first inductor structure;
• and
• a second ground shielding structure located within the second metal layer that is electrically isolated from and circumferentially bounds the second inductor structure;
• wherein the first and the second inductor generate a first inductance value based on the first ground shielding structure and the second ground shielding structure being coupled to a ground reference, and wherein the first and the second inductor structure generate a second inductance value based on the first ground shielding structure and the second ground shielding structure electrically floating.