Electrostatic discharge (esd) circuitry
AssigneeTriQuint Semiconductor, Inc.
InventorBruce J. Tesch
Life of this patent
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Abstract
Embodiments of the present disclosure describe electrostatic discharge (ESD) circuitry and associated techniques and configurations. In one embodiment, ESD circuitry includes a first node coupled with a supply voltage node and a ground node, a first transistor coupled with the first node and the supply voltage node, a second transistor coupled with the first node and the ground node, a second node coupled with the first transistor and the second transistor, a third transistor coupled with the second node and a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node. Other embodiments may be described and/or claimed.
Claims21
Electrostatic discharge (ESD) circuitry comprising:
- a first node coupled with a supply voltage node and a ground node;
- a first transistor coupled with the first node and the supply voltage node;
- a second transistor coupled with the first node and the ground node;
- a second node coupled with the first transistor and the second transistor;
- a third transistor coupled with the second node;
- and
- a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node.
A method of fabricating electrostatic discharge (ESD) circuitry comprising:
- coupling a first node with a supply voltage node and a ground node;
- coupling a first transistor with the first node and the supply voltage node;
- coupling a second transistor with the first node and the ground node;
- coupling a second node with the first transistor and the second transistor;
- coupling a third transistor with the second node;
- and
- coupling a third node with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node.
A system comprising:
- a power amplifier module including a die, the die including:
- a power connection configured to provide a supply voltage node for operation of the die;
- a ground connection configured to provide a ground node;
- and
- an electrostatic discharge (ESD) clamp coupled with the supply voltage node and the ground node, the ESD clamp comprising:
- a first node coupled with the supply voltage node and the ground node;
- a first transistor coupled with the first node and the supply voltage node;
- a second transistor coupled with the first node and the ground node;
- a second node coupled with the first transistor and the second transistor;
- a third transistor coupled with the second node;
- and
- a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node.
Dependencies are inferred from the claim text.