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US 2015/0084681 A1Published application
Variable Attenuator
AssigneeAdvantest (Singapore) Pte Ltd
InventorGiovanni Bianchi
Life of this patent
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Abstract
A variable attenuator comprises a series resistance, and an adjustable shunt resistance, wherein the adjustable shunt resistance comprises a series circuit of a fixed resistor and a semiconductor element having an adjustable resistance.
Claims11
A variable attenuator (130), comprising:
- a series resistance (132-1);
- and
- an adjustable shunt resistance (134),
- wherein the adjustable shunt resistance (134) comprises a series circuit of a fixed resistor (136) and a semiconductor element (138) having a adjustable resistance (R2A), and
- wherein the semiconductor element (138) of the first series circuit of the adjustable shunt resistance (134) is a field-effect transistor (FET) and wherein the field-effect transistor (138) is configured such that, for a minimum attenuation value in a range of 1 to 3 dB, a voltage applied between a drain (137) and a source (135) of the field-effect transistor (138) is reduced by a voltage reduction value in a range of 10 to 60% as compared to a voltage applied between the drain and source of the field-effect transistor alone.
2 more elements
Dependencies are inferred from the claim text.