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US 2015/0084486 A1Published application
Piezoelectric element
AssigneeKonica Minolta, Inc.
InventorHideyuki Eguchi
Life of this patent
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Abstract
Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm.
Claims20
A piezoelectric element comprising a lower electrode made of platinum, a buffer layer made of lead lanthanum titanate, and a perovskite ferroelectric thin film formed in this order on a substrate, wherein
- platinum forming the lower electrode has an average grain size of not smaller than 50 nm and not larger than 150 nm.
Dependencies are inferred from the claim text.