Connection member, semiconductor device, and stacked structure
AssigneeKabushiki Kaisha Toshiba
InventorsAtsuko IIDA, Tadahiro Sasaki, Nobuto Managaki, Yutaka Onozuka, Hiroshi Yamada
Life of this patent
Estimating the term…
Abstract
A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectric material in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane.
Claims25
A connection member comprising:
- a dielectric material;
- a penetrating via penetrating through the dielectric material;
- a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via;
- and
- a second metal plane provided in or on the dielectric material, the second metal plane provided in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane.
A semiconductor device comprising a connection member, the connection member including:
- a dielectric material;
- a penetrating via penetrating through the dielectric material;
- a first metal plane provided in the dielectric material being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via;
- and
- a second metal plane provided in or on the dielectric material, the second metal plane provided in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane.
A stacked structure comprising:
- a connection member including
- a dielectric material,
- a penetrating via penetrating through the dielectric material,
- a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and
- a second metal plane provided in or on the dielectric material, the second metal plane provided in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane;
- and
- a first circuit board electrically connected to the connection member.
A connection member comprising:
- a metal plane;
- a first dielectric material covering the metal plane;
- a metal patch provided with the first dielectric material interposed between the metal patch and the metal plane;
- a connection via provided in the first dielectric material, the connection via connecting the metal plane and the metal patch;
- and
- a first signal line extending in a direction perpendicular to an extension direction of the connection via.
A semiconductor device comprising a connection member, the connection member including:
- a metal plane;
- a first dielectric material covering the metal plane;
- a metal patch provided with the first dielectric material interposed between the metal patch and the metal plane;
- a connection via provided in the first dielectric material, the connection via connecting the metal plane and the metal patch;
- and
- a first signal line extending in a direction perpendicular to an extension direction of the connection via.
A stacked structure comprising;
- a connection member including
- a metal plane,
- a first dielectric material covering the metal plane,
- a metal patch provided with the first dielectric material interposed between the metal patch and the metal plane,
- a connection via provided in the first dielectric material, the connection via connecting the metal plane and the metal patch, and
- a first signal line extending in a direction perpendicular to an extension direction of the connection via;
- and
- a first circuit board electrically connected to the connection member.
A semiconductor device comprising:
- a semiconductor chip;
- an insulation layer provided on a peripheral portion of the semiconductor chip, the insulation layer having a dielectric constant less than that of the semiconductor chip, the insulation layer including an inclined surface extending from the peripheral portion of the semiconductor chip to an inner side;
- a plurality of wiring layers formed on the inclined surface;
- and
- a cap portion provided on the insulation layer, a hollow portion being formed between the cap portion and the semiconductor chip, wherein the cap portion has a penetrating via connected to the wiring layer, and a dielectric constant of the cap portion is higher than that of the insulation layer.
Dependencies are inferred from the claim text.