Die edge side connection

A multi-chip module comprising:

• a first IC die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, a plurality of top surface contact pads, and a plurality of multi-surface contact pads, wherein a multi-surface contact pad includes a top surface substantially in the same plane as the top surface of the top layer of the IC die and a side surface substantially in the same plane as the sidewall surface of the IC die;
• at least one second IC die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, a plurality of top surface contacts pads, and a plurality of multi-surface contact pads, wherein the at least one second integrated circuit die is arranged adjacent to the first integrated circuit die;
• a substrate, wherein the bottom surfaces of the first IC die and the at least one second IC die are in contact with the substrate, and wherein the substrate includes contact pads;
• a first plurality of electrically conductive bonds, wherein an electrically conductive bond of the first plurality is in contact with at least one of the top surface or the side surface of a multi-surface contact pad of the first IC die and at least one of the top surface or side surface of a multi-surface contact pad of the second IC die;
• and
• a second plurality of electrically conductive bonds in contact with contacts pads of the substrate and top surface contact pads of at least one of the first IC die and the at least one second IC die.

A method comprising:

• separating an IC die from a wafer, wherein the separated IC die includes a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, wherein a multi-surface contact pad includes a top surface substantially in the same plane as the top surface of the top layer of the separated IC die;
• exposing a side surface of the at least one multi-surface contact pad, wherein the side surface of the at least one multi-surface contact pad is substantially in the same plane as the sidewall surface of the separated IC die;
• arranging the separated IC die substantially adjacent to a second IC die, wherein the second IC die includes a multi-surface contact pad;
• and
• forming an electrically conductive bond between at least one of including the top surface and the side surface of the multi-surface contact pad of the separated IC die and at least a top surface of the multi-surface contact pad of the second IC die.

An apparatus comprising:

• a first integrated circuit (IC) die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, wherein a multi-surface contact pad includes a top surface substantially in the same plane as the top surface of the top layer of the first IC die and a side surface substantially in the same plane as the sidewall surface of the first IC die;
• a second IC die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one top-surface contact pad, wherein the second IC die is arranged so that the top surface of the second IC die is facing and adjacent to the sidewall surface of the first IC die;
• and
• an electrically conductive bond in contact with the side surface of the at least one multi-surface contact pad of the first IC die and the at least one top-surface contact pad of the second IC die, wherein the electrically conductive bond is a single solder mass arranged on the sidewall surface of the first IC die and the top surface of the second IC die.