Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures
AssigneeMicron Technology, Inc.
InventorsIan C. Laboriante, Prashant Raghu
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Abstract
A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.
Claims20
A method of forming a hydrophobic surface on a semiconductor device structure, the method comprising:
- forming adjacent structures comprising at least one of a titanium material, a zirconium material, and a hafnium material over a substrate, each of the adjacent structures comprising sidewalls and including an opening between the sidewalls;
- and
- forming a material having a hydrophobic surface on the sidewalls of each of the adjacent structures and extending from a retaining structure proximate an upper portion of each of the adjacent structures to the substrate.
A method of forming a semiconductor device structure, comprising:
- forming adjacent structures comprising exposed titanium atoms;
- and
- forming a hydrophobic material extending over an outer sidewall of each of the adjacent structures from a retaining structure proximate an upper portion of each of the adjacent structures to a surface of a substrate underlying each of the adjacent structures, the hydrophobic material comprising hydrophobic compounds having a phosphate group bonded to an exposed titanium atom of the adjacent structures.
A semiconductor device structure, comprising:
- adjacent structures overlying a substrate, each of the adjacent structures comprising at least one of a titanium material, a zirconium material, and a hafnium material;
- an opening in each of the adjacent structures, the opening located between sidewalls of each of the adjacent structures;
- and
- a hydrophobic material overlying the sidewalls of each of the adjacent structures and extending from a retaining structure proximate an upper portion of each of the adjacent structures to the substrate.
Dependencies are inferred from the claim text.