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US 2015/0084183 A1Published application
Integrated circuits with protected resistors and methods for fabricating the same
AssigneeGlobalfoundries Inc.
InventorsJoachim Patzer, Hans-Peter Moll
Life of this patent
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Abstract
Methods and apparatus are provided for an integrated circuit with a transistor and a resistor. The method includes depositing a first dielectric layer over the transistor and the resistor, followed by an amorphous silicon layer. The amorphous silicon layer is implanted over the resistor to produce an etch mask, and the amorphous silicon layer and first dielectric layer are removed over the transistor. A contact location on the transistor is then silicided.
Claims20
A method of producing an integrated circuit comprising:
- depositing a first dielectric layer over a resistor and a transistor of the integrated circuit;
- depositing an amorphous silicon layer over the first dielectric layer;
- implanting the amorphous silicon layer over the resistor to create an etch mask;
- removing the amorphous silicon layer and the first dielectric layer overlying the transistor;
- and
- siliciding a contact location on the transistor.
3 more elements
A method of producing an integrated circuit comprising:
- protecting a resistor of the integrated circuit with a first dielectric layer and an etch mask, wherein the first dielectric layer is positioned between the resistor and the etch mask, and wherein the etch mask has an etch mask thickness of no more than about 200 angstroms;
- exposing a transistor of the integrated circuit;
- and
- siliciding a contact location on the transistor.
1 more element
An integrated circuit comprising:
- a substrate;
- a transistor coupled to the substrate;
- a resistor coupled to the substrate;
- a first dielectric layer overlying the resistor;
- and
- an etch mask overlying the first dielectric layer, wherein the etch mask comprises carbon doped amorphous silicon.
3 more elements
Dependencies are inferred from the claim text.