Ebg structure, semiconductor device, and circuit board

Abstract

An EBG structure of an embodiment includes an electrode plane, a first insulating layer provided on the electrode plane, a first metal patch provided on the first insulating layer, a second metal patch provided on the first insulating layer, a second insulating layer provided on the first and second metal patches, an interconnect layer provided on the second insulating layer, a third insulating layer provided on the interconnect layer, a first via connected to the electrode plane and the first metal patch, and a second via connected to the electrode plane and the second metal patch. The second metal patch is separately adjacent to the first metal patch. The interconnect layer has a first opening and a second opening. The first via penetrates through the first opening. The second via penetrates through the second opening.

Dependencies are inferred from the claim text.