Semiconductor Device and Manufacturing Method Thereof
AssigneeRenesas Electronics Corporation
InventorTetsuya Watanabe
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Abstract
The present invention is capable of suppressing a variation in the characteristics of a semiconductor device. In a conductor pattern CPA and a conductor pattern CPB arranged so as to run side by side with each other, the conductor pattern CPA is divided into a first portion P1 (A) and a second portion P2 (A), and the conductor pattern CPB is also divided into a first portion P1 (B) and a second portion P2 (B). The first portion P1 (A) of the conductor pattern CPA and the second portion P2 (B) of the conductor pattern CPB are formed by first patterning using the same first mask, while the second portion P2 (A) of the conductor pattern CPA and the first portion P1 (B) of the conductor pattern CPB are formed by second patterning using the same second mask.
Claims18
A method for manufacturing a semiconductor device, comprising the step of:
- (a) forming a first conductor pattern and a second conductor pattern running side by side with each other,
- the (a) step including the following steps of:
- (a1) forming a first portion of the first conductor pattern and a second portion of the second conductor pattern by patterning using a first mask;
- and
- (a2) forming a second portion of the first conductor pattern and a first portion of the second conductor pattern by patterning using a second mask,
- wherein a first inter-conductor capacity is formed by the first portion of the first conductor pattern and the first portion of the second conductor pattern, and
- wherein a second inter-conductor capacity is formed by the second portion of the first conductor pattern and the second portion of the second conductor pattern.
A method for manufacturing a semiconductor device, comprising the step of:
- forming a first conductor pattern and a second conductor pattern by a combination of first patterning using a first mask and second pattering using a second mask,
- wherein when a positional displacement occurs between the first mask and the second mask, each of the first conductor pattern and the second conductor pattern is divided into a portion formed by the first patterning and a portion formed by the second patterning in such a manner that a portion where the distance between the first conductor pattern and the second conductor pattern becomes smaller than when the positional displacement does not occur between the first and second masks and a portion where the distance becomes larger than when the positional displacement does not occur between the first and second masks exist.
A semiconductor device comprising:
- a first conductor pattern and a second conductor pattern running side by side with each other,
- wherein the first conductor pattern serves as a first electrode of a capacitive element,
- wherein the second conductor pattern serves as a second electrode of the capacitive element,
- wherein the first conductor pattern and the second conductor pattern each include:
- (a1) a first portion extending in a first direction,
- (a2) a second portion that extends in the first direction and is arranged deviated from the first portion in a second direction orthogonal to the first direction, and
- (a3) a coupling portion that couples the first portion and the second portion and extends in the second direction, and
- wherein the first portion of the first conductor pattern and the second portion of the second conductor pattern are arranged over a straight line.
Dependencies are inferred from the claim text.