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US 2015/0084155 A1Published application
Semiconductor device and method of fabricating the same
AssigneeSK hynix Inc.
InventorsHyo-Seok LEE, Seung-Jin YEOM, Sung-Won LIM
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Abstract
A method for fabricating a semiconductor device includes defining a curved active region by forming a plurality of trenches over a semiconductor substrate, forming an insulating layer to fill the plurality of trenches, and forming a pair of gate lines crossing the curved active region, so that it is possible to prevent leaning of an active region by forming a curved active region.
Claims6
1-11. (canceled)
A semiconductor device comprising:
- a curved active region defined by a plurality of trenches formed over a semiconductor substrate;
- an insulating layer filling the plurality of trenches;
- and
- a pair of gate lines crossing the curved active region.
1 more element
16-17. (canceled)
Dependencies are inferred from the claim text.