US 2015/0084153 A1 · SCHOTTKY DEVICE AND METHOD OF MANUFACTURE

Abstract

A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.

Claims22

Dependent claims

A Schottky device, comprising:

a semiconductor material of a first conductivity type having first and second major surfaces;
a first trench having sidewalls and a floor, the first trench extending from the first major surface into a first portion of the semiconductor material;
and
a second trench having sidewalls and a floor, the second trench extending from the major surface into a second portion of the semiconductor material, wherein a third portion of the semiconductor material is between the first and second trenches and has a multi-concentration impurity profile, wherein impurity materials of the multi-concentration impurity profile are of a second conductivity type.

1 more element

A Schottky device, comprising:

a semiconductor material of a first conductivity type having first and second major surfaces;
a plurality of trenches extending from the first major surface into the semiconductor material, wherein the plurality of trenches comprises at least first, second, and third trenches, wherein a first portion of the semiconductor material is between the first and second trenches, and a second portion of the semiconductor material is between the second and third trenches;
a conductivity modulation means that modulates conductivity in the first portion of the semiconductor material.

A method for manufacturing a Schottky device, comprising:

providing a semiconductor material of a first conductivity type having first and second major surfaces:
forming a first mesa structure from a first portion of the semiconductor material;
forming a first doped region of a second conductivity type and a first impurity material concentration in a first sub-portion of the first mesa structure, the first doped region extending from the first major surface a first distance into the first mesa structure:
forming a second doped region of the second conductivity type and a second impurity material concentration in a second sub-portion of the first mesa structure;
and
forming a Schottky contact to the first mesa structure.

3 more elements

Dependencies are inferred from the claim text.

Schottky device and method of manufacture

Life of this patent

Schottky device and method of manufacture

Life of this patent

Abstract

Claims22