Photodiode
AssigneesDa Wei Lin, Yun-Shan Chang
InventorYUN-SHAN CHANG
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Abstract
A photodiode includes a first-type substrate. A second-type doped well and a second-type doped region are formed in the first-type substrate. An isolation region is formed to enclose the peripheral side of the second-type doped well, and separated from the second-type doped well. The second-type doped region is formed in the second-type doped well and extends from the surface of the second-type doped well. A protective layer covers the first-type substrate. A contact conductor including a contact layer and a conductive strip penetrates through the protective layer. The contact layer is formed on the bottom end of the conductive strip and in contact with the second-type doped region to make an electrical connection.
Claims10
A photodiode comprising:
- a first-type substrate having an upper surface;
- a second-type doped well defined within the first-type substrate, wherein a P-N junction is formed at an interface between the first-type substrate and the second-type doped well;
- a second-type doped region defined within the second-type doped well and extending from a surface of the second-type doped well;
- an isolation region formed within the first-type substrate and separated from the second-type doped well;
- a protective layer formed on the upper surface and covering the second-type doped well;
- and
- a contact conductor penetrating through the protective layer and including a contact layer and a conductive strip, wherein the conductive strip is formed on the contact layer, and the contact layer is connected to and in contact with the second-type doped region.
Dependencies are inferred from the claim text.