Back to results
US 2015/0084141 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi FUJIMORI
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
Claims20
A semiconductor device comprising:
- an MRAM chip including a semiconductor substrate, and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate;
- and
- a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
A method of manufacturing a semiconductor device, the method comprising:
- forming an MRAM chip including a semiconductor substrate and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate;
- and
- forming a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip and having a closed magnetic path by an electrolytic plating.
Dependencies are inferred from the claim text.