Mechanism for forming metal gate structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Jia HSIEH, Chih-Lin WANG, Chia-Der CHANG
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Abstract
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode.
Claims21
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal gate stack formed over the semiconductor substrate;
- an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack comprises a metal gate electrode;
- and
- a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer, wherein the metal oxide structure comprises an oxidized material of the metal gate electrode.
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal gate stack formed over the semiconductor substrate;
- an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack comprises a metal gate electrode;
- a metal oxide structure formed over the insulating layer, wherein the metal oxide structure comprises an oxidized material of the metal gate electrode;
- and
- an oxide film formed over the insulating layer and the metal gate stack to cover the metal oxide structure, wherein the oxide film is a continuous film and is in direct contact with the metal oxide structure and the insulating layer.
15-20. (canceled)
Dependencies are inferred from the claim text.