Mos p-n junction diode with enhanced response speed and manufacturing method thereof

A MOS P-N junction diode, comprising:

• a semiconductor substrate;
• a mask layer formed on the semiconductor substrate, wherein a surface of the mask layer is partially exposed;
• a guard ring layer formed in the semiconductor substrate by a first ion implantation process and a thermal drive-in process, wherein a first side of the guard ring layer is connected with the mask layer;
• a gate oxide layer formed on a part of the semiconductor substrate;
• a polysilicon structure formed on the gate oxide layer;
• a polysilicon oxide layer formed on the polysilicon structure;
• a central conductive layer formed in the semiconductor substrate by a second ion implantation process, wherein a part of the central conductive layer is connected with a second side of the guard ring layer, and the central conductive layer is separated from the gate oxide layer;
• an ion implantation layer formed within the guard ring layer and the central conductive layer by a third ion implantation process;
• a channel region formed in the semiconductor substrate by a fourth ion implantation process, wherein the channel region is located beside the central conductive layer and disposed under the gate oxide layer;
• and
• a metallic sputtering layer formed on the mask layer, the polysilicon structure, the polysilicon oxide layer, the guard ring layer, the central conductive layer and the gate oxide layer.