US 2015/0084133 A1 · TUNNELING FIELD EFFECT TRANSISTOR DEVICE AND RELATED MANUFACTURING METHOD

Abstract

A transistor device may include a first source portion including a first InSb material set and a first first-type dopant set. The transistor device may include a first drain portion including a second InSb material set and a first second-type dopant set. The transistor device may include a first gate and a corresponding first channel portion disposed between the first source portion and the first drain portion and including a third InSb material set. The transistor device may include a second drain portion including a first GaSb material set and a second first-type dopant set. The transistor device may include a second source portion including a second GaSb material set and a second second-type dopant set. The transistor device may include a second gate and a corresponding second channel portion disposed between the second source portion and the second drain portion and including a third GaSb material set.

Claims20

Dependent claims

A transistor device comprising:

a first source portion including a first InSb material set and a first first-type dopant set;
a first drain portion including a second InSb material set and a first second-type dopant set;
a first channel portion disposed between the first source portion and the first drain portion and including a third InSb material set;
a first gate member overlapping the first channel portion;
a second drain portion including a first GaSb material set and a second first-type dopant set;
a second source portion including a second GaSb material set and a second second-type dopant set;
a second channel portion disposed between the second source portion and the second drain portion and including a third GaSb material set;
and
a second gate member overlapping the second channel portion.

6 more elements

A method for manufacturing a transistor device, the method comprising:

forming an InSb layer on a substrate;
forming a GaSb layer on the substrate;
forming a first gate member that partially overlaps the InSb layer, such that a first portion of the InSb layer and a second portion of the InSb layer are not covered by the first gate member;
forming a second gate member that partially overlaps the GaSb layer, such that a first portion of the GaSb layer and a second portion of the GaSb layer are not covered by the second gate member;
doping a first first-type dopant set in the first portion of the InSb layer;
doping a first second-type dopant set in the second portion of the InSb layer;
doping a second first-type dopant set in the second portion of the GaSb layer;
and
doping a second second-type dopant set in the first portion of the GaSb layer.

6 more elements

Dependencies are inferred from the claim text.

Tunneling field effect transistor device and related manufacturing method

Life of this patent

Tunneling field effect transistor device and related manufacturing method

Life of this patent

Abstract

Claims20