Ldmos device with short channel and associated fabrication method

A method of fabricating an LDMOS device, comprising:

• forming a gate of the LDMOS device on a semiconductor substrate;
• implanting dopants of a first conductivity type into a body region of the LDMOS device vertically;
• performing a rapid thermal annealing process and forming a short channel of the LDMOS device;
• and
• forming a source region and a drain contact region of the LDMOS device, wherein the source region and the drain contact region are of a second conductivity type different from the first conductivity type.

An LDMOS device, comprising:

• a gate;
• a drain region of a first conductivity type;
• a body region of a second conductivity type different from the first conductivity type;
• and
• a source region of the first conductivity type and formed in the body region;
• wherein the drain region is at one side of the gate and the source region is at the other side of the gate, and wherein the peak concentration of the second conductivity type is beneath the source region.

The LDMOS device according to 16, wherein the gate comprises:

• a dielectric layer;
• an electrical conducting layer formed on the dielectric layer;
• and
• a gate seal oxide formed on the conducting layer and on the side surface of the gate.