Semiconductor device

A semiconductor device comprising

• a semiconductor substrate having an element region and a termination region surrounding the element region, wherein:
• the element region includes
• a first body region having a first conductivity type and being placed in a range facing a top face of the semiconductor substrate,
• a first drift region having a second conductivity type and making contact with a bottom face of the first body region, and
• a plurality of first floating regions, each of the first floating regions having the first conductivity type and being surrounded by the first drift region;
• the termination region includes
• a plurality of field limiting ring regions, each of the field limiting ring regions having the first conductivity type, being placed in a range facing the top face of the semiconductor substrate and surrounding an outer periphery of the element region,
• a second drift region having the second conductivity type, making contact with the field limiting ring regions and surrounding the field limiting ring regions, and
• a plurality of second floating regions, each of the second floating regions having the first conductivity type and being surrounded by the second drift region;
• the second floating regions surround the outer periphery of the element region;
• and
• at least one of the second floating regions is placed at an element region side relative to an inner peripheral side surface of one of the field limiting ring regions, the one of the field limiting ring regions being the closest of the field limiting ring regions to the element region.