Bottom source nmos triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (tvs)

A transient voltage suppressing (TVS) device comprising:

• a bipolar transistor functioning as a Zener clamp for suppressing a transient voltage;
• and
• a bottom source metal oxide semiconductor field effect transistor (BS-MOSFET) connected in parallel with said bipolar transistor for triggering said bipolar transistor wherein the BS-MOSFET further comprises a planar gate;
• said bipolar transistor and the bottom source MOSFET are vertical devices further comprising a drain/collector terminal on the top surface and a source/emitter terminal on the bottom surface,
• the bottom source MOSFET triggers the bipolar transistor upon a transient voltage event.

A method of forming a transient voltage suppressing (TVS) device) comprising:

• providing an epitaxial layer supported on a semiconductor substrate;
• forming a vertical bipolar transistor in the epitaxial layer and semiconductor substrate;
• forming a bottom source metal-oxide-semiconductor field effect transistor (BS-MOSFET) in parallel with the bipolar transistor wherein the drain of the BS-MOSFET also serves as the collector of the bipolar transistor, the base of the BS-MOSFET also serves as the base of the bipolar transistor and the source of the BS-MOSFET also serves as the emitter of the bipolar transistor, and wherein the epitaxial layer and the semiconductor substrate act as the source of the BS-MOSFET,
• such that the BS-MOSFET turns on and triggers the bipolar transistor upon a transient voltage event.