Semiconductor device
AssigneeSK hynix Inc.
InventorsTae Kyung KIM, Tae Gyun KIM
Life of this patent
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Abstract
Provided is a semiconductor device including a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in one direction to be offset from each other, wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other (m is an integer of 0 or more).
Claims20
A semiconductor device comprising:
- a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in one direction to be offset from each other,
- wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other, and
- wherein m is an integer of 0 or more.
A semiconductor device comprising a plurality of channel columns, each of the channel columns including a plurality of channel layers arranged in one direction to be offset from each other,
- wherein each of the channel layers comprises a source side channel layer, a drain side channel layer, and a pipe channel layer connecting the source side channel layer and the drain side channel layer, and
- a first channel column and a second channel column overlap each other so that a first source side channel layer of the first channel column and a first source side channel layer of the second channel column are aligned with each other, and the second channel column and a third channel column overlap each other so that a first drain side channel layer of the second channel column and a first drain side channel layer of the third channel column are aligned with each other.
A semiconductor device comprising a plurality of channel columns, each of the channel columns including channel layers arranged in one direction and aligned with each other, wherein the channel layers, included in each channel column, are divided into groups consisting of k channel columns (k is an integer of two or more), and the groups are spaced apart from each other,
- wherein each of the channel layers comprises a source side channel layer, a drain side channel layer, and a pipe channel layer connecting the source side channel layer and the drain side channel layer, and
- source side channel layers of a first channel column and source side channel layers of a second channel column are arranged to be offset from each other, and drain side channel layers of the second channel column and drain side channel layers of a third channel column are arranged to be offset from each other.
Dependencies are inferred from the claim text.