Back to results
US 2015/0084113 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsDaisuke Matsushita, Yuuichiro Mitani
Life of this patent
Estimating the term…
Abstract
It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
Claims33
-15. (canceled)
A semiconductor device, comprising:
- a silicon substrate;
- a tunnel insulating film formed on the silicon substrate, the tunnel insulating film including silicon, oxygen, and nitrogen;
- a floating gate electrode formed on the tunnel insulating film;
- an insulating film formed on the floating gate electrode;
- and
- a control electrode formed on the insulating film,
- wherein a nitrogen distribution is formed across the tunnel insulating film and the floating gate electrode and the nitrogen distribution has a first peak and a second peak, the first peak is located closer to the silicon substrate than the second peak, a nitrogen concentration at a first interface between the silicon substrate and the tunnel insulating film is lower than a nitrogen concentration at a second interface between the tunnel insulating film and the floating gate electrode.
4 more elements
A semiconductor device comprising:
- a silicon region;
- a tunnel insulating film formed on the silicon region, the tunnel insulating film including silicon, oxygen, and nitrogen;
- a charge storage film formed on the tunnel insulating film;
- an insulating film formed on the charge storage film;
- and
- a control electrode formed on the insulating film,
- wherein a nitrogen distribution is formed across the tunnel insulating film and the charge storage film and the nitrogen distribution has a first peak and a second peak, the first peak is located closer to the silicon region than the second peak, a nitrogen concentration at a first interface between the silicon region and the tunnel insulating film is lower than a nitrogen concentration at a second interface between the tunnel insulating film and the charge storage film.
4 more elements
Dependencies are inferred from the claim text.