Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsHiroyuki Okazaki, Yoshitaka Kamo, Yoichi Nogami, Hidetoshi Koyama, Shinichi Miyakuni
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Abstract
A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of AlxGa1-xN (0≦x≦1) on the first major surface of the Si substrate; an epitaxially grown crystalline layer of AlyGa1-yN (0≦y≦1, x≠y) on the buffer layer; a transistor on the epitaxially grown crystalline layer; and a filler of AlxGa1-xN and having the same x as the buffer layer. A through hole in the Si substrate extends from the second major surface to the buffer layer, and the through hole is filled with the filler.
Claims10
A semiconductor device comprising:
- a Si substrate having first and second major surfaces facing in opposite directions;
- a buffer layer of AlxGa1-xN (0≦x≦1) on the first major surface of the Si substrate;
- an epitaxially grown crystalline layer of AlyGa1-yN (0≦y≦1, x≠y) on the buffer layer;
- a transistor located on the epitaxially grown crystalline layer;
- and
- a filler of AlxGa1-xN and having the same x as the buffer layer, wherein
- the Si substrate includes a through hole extending from the second major surface to the buffer layer, and
- the through hole is filled with the filler.
A method for manufacturing a semiconductor device comprising:
- forming an AlxGa1-xN (0≦x≦1) buffer layer on a first major surface of a Si substrate having the first major surface and a second major surface, wherein the first and second major surfaces face in opposite directions;
- epitaxially growing an AlyGa1-yN (0≦y≦1, x≠y) crystalline layer on the buffer layer;
- forming a transistor on the Aly Ga1-yN crystalline layer;
- using the buffer layer as a stopper layer, etching the Si Substrate from the second major surface to form a through hole;
- and
- filling the through hole with a filler, wherein the filler is AlxGa1-xN having the same x as the buffer layer.
Dependencies are inferred from the claim text.