Multi-fin finfets with merged-fin source/drains and replacement gates

A method of making a finFET device, the method comprising:

• forming fins on a semiconductor substrate, wherein each of the fins has a pair of sidewalls aligned parallel to the length of the fin;
• merging the fins by selectively growing dummy semiconductor regions on the sidewalls of the fins, wherein top surfaces of the dummy semiconductor regions are substantially coplanar with top surfaces of the fins;
• forming a sacrificial gate that covers a center portion of the fins and the dummy semiconductor regions;
• replacing the portions of the dummy semiconductor regions not covered by the sacrificial gate with faceted semiconductor regions;
• the faceted semiconductor regions between the fins intersecting to form gaps between the faceted semiconductor regions and the sacrificial gate;
• depositing a dielectric layer, wherein the dielectric layer fills the gaps between the faceted semiconductor regions and the sacrificial gate;
• and
• replacing the sacrificial gate and remaining dummy semiconductor regions with a replacement metal gate.

A semiconductor structure comprising:

• semiconductor fins;
• a gate over a middle portion of the semiconductor fins;
• and
• faceted semiconductor regions between the semiconductor fins outside of the gate, wherein gaps exist between the faceted semiconductor regions and the gate so that the faceted semiconductor regions do not directly contact the gate.