Pixel circuit for global shutter of substrate stacked image sensor
AssigneeSiliconfile Technologies Inc.
InventorsJin Eun Choi, Jae Won Uhm, Seung Hoon Sa
Life of this patent
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Abstract
A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip.
Claims26
A pixel circuit for a global shutter of a substrate-stacked image sensor, comprising a semiconductor chip including:
- a photodiode configured to output electric charges generated through a light sensing operation;
- and
- a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode,
- wherein the semiconductor chip has a structure in which the semiconductor chip is stacked over another semiconductor chip.
A pixel circuit for a global shutter of a substrate-stacked image sensor, comprising one or more semiconductor chips each including:
- a photodiode configured to output electric charges generated through a light sensing operation;
- a first transfer transistor;
- a memory transistor;
- and
- a second transfer transistor,
- wherein the semiconductor chip has a structure in which the semiconductor chip is stacked over another semiconductor chip, and
- the first transfer transistor, the memory transistor, and the second transfer transistor are formed in such a manner that no gap is formed between the first transfer transistor and the memory transistor and between the memory transistor and the second transfer transistor.
A pixel circuit for a global shutter of a substrate-stacked image sensor, comprising:
- a first semiconductor chip including:
- a first substrate having a photodiode configured to output electric charges generated through a light sensing operation;
- a reset node for resetting the photodiode;
- and a floating diffusion node;
- and
- a first interlayer dielectric layer having a first transfer transistor, a second transfer transistor, a memory transistor, and a metal layer;
- and
- a second semiconductor chip including:
- a second substrate;
- and
- a second interlayer dielectric layer having a read-out circuit and a second metal layer and configured to transfer an output voltage corresponding to light sensed through the photodiode,
- wherein the first and second semiconductor chips are stacked over each other.
A pixel circuit for a global shutter of a substrate-stacked image sensor, comprising:
- a first semiconductor chip including:
- a first substrate having a floating diffusion node and a photodiode configured to output electric charges generated trough a light sensing operation;
- a first interlayer dielectric layer having a first reset transistor, a first transfer transistor, a second transfer transistor, a memory transistor, and a first metal layer, the first reset transistor coupling the photodiode to a reset node to reset the photodiode;
- and
- a second semiconductor chip including:
- a second substrate;
- and
- a second interlayer dielectric layer having a read-out circuit and a second metal layer and configured to transfer an output voltage corresponding to light sensed through the photodiode,
- wherein the first and second semiconductor chips are stacked over each other.
Dependencies are inferred from the claim text.