Semiconductor device and method of forming the same

A semiconductor device comprising:

• a substrate on which a plurality of logic cells are provided, each logic cell including a P-type metal-oxide-semiconductor field effect transistor (PMOSFET) region and an N-type metal-oxide-semiconductor field effect transistor (NMOSFET) region;
• a plurality of active portions provided on the substrate and extending in a first direction;
• contacts and gate structures extending in a second direction intersecting the first direction, the contacts and the gate structures alternately arranged;
• and
• a common conductive line extending along a boundary region of the plurality of logic cells in the first direction,
• wherein at least one of the contacts is electrically connected to the common conductive line through a via therebetween,
• wherein each of the contacts has a bar shape extending in the second direction and covers a plurality of the active portions.

A method of forming a semiconductor device, the method comprising:

• preparing a substrate including a plurality of logic cell regions, each of the logic cells including a P-type metal-oxide-semiconductor field effect transistor (PMOSFET) region and an N-type metal-oxide-semiconductor field effect transistor (NMOSFET) region;
• forming a plurality of active portions extending in a first direction on the substrate;
• forming gate structures extending in a second direction intersecting the plurality of active portions;
• forming line-type conductive patterns connected in common to the plurality of active portions, the line-type conductive patterns extending in the second direction;
• and
• patterning the line-type conductive patterns to form bar-type contacts separated from each other between the plurality of logic cell regions and between the NMOSFET region and the PMOSFET region.