Semiconductor Device

A semiconductor device comprising:

• a first semiconductor region, which has a first conductivity type;
• a second semiconductor region, which has a second conductivity type and is arranged on the first semiconductor region;
• a third semiconductor region, which has the first conductivity type and is arranged on the second semiconductor region;
• a fourth semiconductor region, which has the second conductivity type and is arranged on the third semiconductor region;
• an insulation film, which is arranged on an inner wall of a recess extending from an upper surface of the fourth semiconductor region and penetrates the fourth semiconductor region and the third semiconductor region to reach the second semiconductor region;
• a control electrode, which is arranged on a region of the insulation film on a side surface of the recess, the region facing a side surface of the third semiconductor region;
• a bottom electrode, which is arranged on the insulation film with being separated from the control electrode on a bottom surface of the recess;
• a first main electrode, which is electrically connected to the first semiconductor region;
• an interlayer insulation film arranged on the control electrode and the bottom electrode;
• and
• a second main electrode, which is arranged on the third semiconductor region and the fourth semiconductor region, above the control electrode and the bottom electrode, with interposing the interlayer insulation film, and electrically connected to the fourth semiconductor region and the bottom electrode,
• wherein an area of the recess is larger than an area of a semiconductor region between the adjacent recesses, as viewed from a plan view.