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US 2015/0084089 A1Published application
Insulation structure for high temperature conditions and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung Ki LEE, Seog Moon CHOI, Sang Hyun SHIN
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Abstract
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.
Claims8
1-11. (canceled)
An insulation structure for high temperature conditions comprising:
- a substrate;
- a conductive pattern disposed on the substrate and having an upper surface divided into a first region and a second region;
- and
- a metal oxide layer pattern disposed on the first region of the conductive pattern, wherein:
- a lower surface of the metal oxide layer pattern contacts an upper surface of the conductive pattern;
- and
- the second region of the conductive pattern provides an mounting area and the metal oxide layer pattern is made of one selected from a group consisting of anodized Al, anodized Ti and anodized Mg.
4 more elements
Dependencies are inferred from the claim text.