Light emitting diode and led module having the same

A light emitting diode module comprising:

• a printed circuit board;
• and
• a light emitting diode adhered onto the printed circuit board by solder paste,
• wherein the light emitting diode includes:
• a first conductivity type semiconductor layer;
• a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer;
• a first ohmic-contact structure in contact with the first conductivity type semiconductor layer;
• a second ohmic-contact structure in contact with the second conductivity type semiconductor layer of the mesa;
• a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure;
• a current distributing layer electrically connected to the first ohmic-contact structure at least partially exposed by the first opening part of the lower insulating layer, the current distributing layer disposed to form a third opening part at least partially exposing the second opening part;
• and
• an upper insulating layer at least partially covering the current distributing layer,
• wherein the upper insulating layer is disposed to form a fourth opening part defining a first electrode pad region by at least partially exposing the current distributing layer and a fifth opening part defining a second electrode pad region by at least partially exposing an upper region of the second ohmic-contact structure which is at least partially exposed by the second opening part;
• and
• the first electrode pad region and the second electrode pad region are respectively adhered to the corresponding pads on the printed circuit board by the solder paste.

A method of manufacturing a light emitting diode, the method comprising:

• forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate;
• forming a mesa over the first conductivity type semiconductor layer by patterning the second conductivity type semiconductor layer and the active layer;
• forming a first ohmic-contact structure to contact the first conductivity type semiconductor layer and a second ohmic-contact structure to contact the second conductivity type semiconductor layer of the mesa;
• forming a lower insulating layer to at least partially cover the mesa and the first conductivity type semiconductor layer and to have a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure;
• and
• forming a current distributing layer to connect to the first ohmic-contact structure on the lower insulating layer and to have a third opening part at least partially exposing the second opening part.