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US 2015/0084082 A1Published application
Semiconductor light-emitting element
AssigneeStanley Electric Co., Ltd.
InventorSatoshi TANAKA
Life of this patent
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Abstract
A semiconductor light-emitting element includes: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer.
Claims7
A semiconductor light-emitting element comprising:
- an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer;
- a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer;
- and
- a covering electrode layer formed so as to bury the reflective metal layer.
1 more element
Dependencies are inferred from the claim text.