Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
AssigneeInternational Business Machines Corporation
InventorsCan Bayram, Christos D. Dimitrakopoulos, Keith E. Fogel, Jeehwan Kim, John A. Ott, Devendra K. Sadana
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Abstract
A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.
Claims7
A light emitting diode (LED) structure comprising:
- a first contact containing at least one first metal containing layer that is in contact with at least one first gallium containing material layer having a first conductivity type;
- an intrinsic semiconductor material layer in contact with the at least one first gallium containing material layer having the first conductivity type;
- at least one second gallium containing material layer having a second conductivity type in contact with the intrinsic semiconductor material layer;
- and
- a second contact containing at least one second metal containing layer that is in contact with a surface of the at least one second gallium containing material layer that is opposite a surface of the at least one second gallium containing material that is in direct contact with the intrinsic semiconductor material layer, wherein a surface of one or more of the at least one first gallium containing material layer and the at least one second gallium containing layer is a stepped surface.
Dependencies are inferred from the claim text.